Comparison of Heavy Ion and Electron-Beam Upset Data for GaAs SRAMs
Abstract
Single event upsets in GaAs complementary enhancement-mode junction field effect transistor static random access memories have been studied. Two experimental approaches were used: circuit irradiation by high-energy particles, and upset mapping using focused electron-beam pulses. Data obtained by these two methods are compared, and good agreement is found. The heavy ion data were taken which data yield upset cross-sections versus linear energy transfer (LET). From these plots one can obtain the LET thresholds at which upsets begin to occur, and the area per cell which is sensitive to particle strikes. The use of nanosecond duration electron-beam pulses to map the sensitive areas of GaAS SRAMs has been previously described. Single 39 keV electron-beam pulses are rastered across a memory cell, and the locations at which upsets occur are mapped. The charge per pulse is varied from map to map, and in this manner the upset area versus pulse energy is obtained. The effective LET of a 39 keV electron has been estimated from literature data, and this value is combined with the upset area versus pulse charge to yield a plot of cross-section versus LET which can be compared with the heavy ion data. Good agreement in upset thresholds and cross-sectional areas is found. In addition, the electron-beam data also shows which regions in a circuit are sensitive. The sensitive regions in a cell are dependent on circuit configuration and device geometry. Data for two different circuit designs will be presented.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1988
- Accession Number
- ADA199218
Entities
People
- L. D. Flesner
- R. Zuleeg
- W. A. Kolasinski
Organizations
- University of California, San Diego