Growth of Gallium Arsenide Using Ion Cluster Beam Technology. Volume 2. Phase 2

Abstract

This program was designed to study the feasibility of growing epitaxial GaAs thin films for subsequent application in electronic devices. Due to mechanical difficulties and design problems the technique of deposition via ionized clusters was not realized. Data collected is somewhat inconclusive. To answer the feasibility question further, work including modification of the hardware needs to be performed. To this point the techniques have been shown to be capable of growing single crystal GaAs, but the required electrical characteristics of the film are not present. Keywords: Gallium Arsenides; Ion cluster beam; Ion assisted growth.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1988
Accession Number
ADA199635

Entities

People

  • James M Bennett
  • Robert L. Adams

Tags

Communities of Interest

  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Aeronautical Laboratories
  • Air Force
  • Air Force Facilities
  • Avionics
  • Classification
  • Contracts
  • Corporations
  • Crystal Structure
  • Diameters
  • Electrons
  • Elements
  • Films
  • Gallium
  • Gallium Arsenides
  • Governments
  • Procurement
  • Security

Readers

  • Integrated Circuit Design and Technology.
  • Systems Analysis and Design
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene