Low Temperature Activation of Ion Implanted Compound Semiconductors

Abstract

During the reported SBIR phase I program, Microwave Monolithics Incorporated (MMInc.) investigated the feasibility of a new low temperature activation method for ion implanted GaAs processing. This approach taken by MMInc. is based upon the successful solid phase epitaxy developed for silicon integrated circuit processing. The work performed during phase I revealed a crystalline defect restriction to re-crystallation of the amorphous region. The major deterrent to the application of this approach in GaAs appears to occur during the complex amorphization step. Although this topic has high risk it has extremely high potential for improved processing technology needed for high frequency mm-wave devices.

Open PDF

Document Details

Document Type
Technical Report
Publication Date
Jun 06, 1988
Accession Number
ADA199817

Entities

People

  • Robert T. Fairman

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Advanced Materials
  • Compound Semiconductors
  • Crystal Lattices
  • Crystals
  • Diffraction
  • Electron Diffraction
  • Electronic Circuits
  • High Temperature
  • Impurities
  • Integrated Circuits
  • Ion Implantation
  • Mass Spectrometry
  • Materials
  • Point Defects
  • Scattering
  • Semiconductors
  • Solid Phases

Fields of Study

  • Materials science

Readers

  • Integrated Circuit Design and Technology.
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics