Scanning Tunneling Microscopy of Semiconductor Surfaces

Abstract

This research program is aimed at studying the atomic structure of semiconductor surfaces using scanning tunneling microscopy (STM). Extensive work has been carried out on the behavior of both indium and gallium on the (111) and the (100) surfaces of silicon. The STM images provide new structural information on all of the metal-induced surface reconstructions observed in these systems. The STM has been particularly applicable to the study of multi-phase surfaces, localized defects, local metal segregation, all of which arise during the growth of a metal on a semiconductor, and can play an important role in the properties of the surface. Information on such spatially localized features (Sub-100 A) is inaccessible by other means. Some preliminary studies of the InP (110) surface have been done. It is anticipated that the the primary thrust of the research will shift to compound semiconductor surfaces during the coming year. Keywords: Atomic structure; Semiconductor surfaces; Silicon; Indium; Gallium; Scanning tunneling microscopy.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1988
Accession Number
ADA199836

Entities

People

  • Calvin Quate

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Acoustic Microscopes
  • Atomic Structure
  • Atoms
  • Chemistry
  • Classification
  • Compound Semiconductors
  • Contracts
  • Films
  • Materials
  • Metals
  • Microscopes
  • Microscopy
  • Military Research
  • Physics
  • Semiconductors
  • Universities
  • Vacuum

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene