Use of D2 to Elucidate OMVPE (Organometallic Vapor Phase Epitaxial) Growth Mechanisms
Abstract
Research during the first year of this project has concentrated on determining the pyrolysis mechanisms for the precursor molecules trimethylgallium (TMGa), trimethylindium (TMIn), arsine (AsH3), and phosphine (PH3) commonly used for organometallic vapor phase epitaxial growth (OMVPE) of III/V semiconductors. The technique used is mass spectrometry with the pyrolysis occurring in various ambients including H2, He, and D2. The latter allows labelling of reaction products involving interactions with the ambient. TMGa and TMIn were discovered to pyrolyze by a new mechanism involving H (D) radicals. The hydrides decompose by heterogeneous release of H atoms. Together, the TMIII and group V hydride pyrolyze via a concerted reaction involving formation of an adduct. In addition, pyrolysis and OMVPE growth studies were conducted using the newly developed group V sources tertiarybutylarsine (TBAs) and tertiarybutylphosphine (TBP). These precursors pyrolyze by radical processes where a t-butyl radical is produced which subsequently attacks the parent molecule. Adding TMGa to the system has no effect on either TBAs or TBP pyrolysis. Keywords: Hydrogen, Helium, Deuterium.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 04, 1988
- Accession Number
- ADA199841
Entities
People
- Gerald B. Stringfellow
Organizations
- University of Utah