Photoreflectance Study of Boron Ion-Implanted (100) Cadmium Telluride
Abstract
We have studied ion-implanted (100) cadmium telluride using the contactless technique of photoreflectance. The implantations were performed using 50- to 400-keV boron ions to a maximum dosage of 1.5 x 10 to the 16 power/ sq. cm, and the annealing was accomplished at 500C under vacuum. The spectral measurements were made at 77 K near the E sub 0 and E sub 1 critical points; all the spectra were computer-fitted to Aspnes' theory. The spectral line shapes from the ion-damaged, partially recovered and undamaged, or fully recovered regions could be identified, and the respective volume fraction of each phase was estimated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 03, 1988
- Accession Number
- ADA199974
Entities
People
- M. S. Odell
- P. M. Amirtharaj
- R. C.. Bowman Jr.
- R. L. Alt
Organizations
- The Aerospace Corporation