A Comparative Analysis of Chemical Vapor Deposition Techniques for the Growth of 3-5 Epitaxial Films

Abstract

A program to compare the chloride, hydride and metal organic chemical vapor deposition techniques is described. A deposition system capable of depositing films by all three techniques was constructed and equipped with a modulated molecular beam mass spectrometer and, more recently, A Raman spectrometer. The thermal decomposition kinetics of NH3, PH3 and AsH3 were measured and the results applied to reactor operation. The hydride source region was analyzed and design procedure established. The unintentional incorporation of Si in GaAs and InP with the MOCVD process was investigated and methods of reducing these levels suggested. Substrates preparation procedures were compared using UHV surface analysis tools. A significatn amount of hydrogen was found in GaAs (100) substrates. Keywords: Vapor phase epitaxy, III-V semiconductors, Thin films, Ammonia, Phosphides, Gallium arsenides.

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Document Details

Document Type
Technical Report
Publication Date
Apr 01, 1988
Accession Number
ADA200029

Entities

People

  • Kenneth P. Quinlan
  • Timothy J. Anderson

Organizations

  • University of Florida

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Chemical Equilibrium
  • Chemical Reaction Properties
  • Chemical Reactions
  • Chemical Synthesis
  • Chemical Vapor Deposition
  • Chemistry
  • Compound Semiconductors
  • Crystal Structure
  • Dissociation
  • Equations Of State
  • Heat Energy
  • Measurement
  • Point Defects
  • Pressure Measurement
  • Semiconductors
  • Silicon Compounds
  • Thermodynamics

Fields of Study

  • Materials science

Readers

  • Analytical Chemistry
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene