Study of the Mechanism of Electrical Conductivity in Molecular Beam- Deposited Polymer Films of Ethylene on Silicon Substrates
Abstract
The following report describes experiments performed on a molecular beam machine in which mixtures of ethylene and nitrogen, at supersonic speeds, were deposited on substrates of high-resistivity silicon and sapphire held at 4K. At the conclusion of a series of fairly difficult measurements, the results showed that the increases in silicon conductivity that had been seen earlier were due to ion implantation of ethylene, and not to the deposition of a conducting polymer as had been thought earlier. Despite the failure to obtain the desired results, there were several offshoots of the work that may have some potential interest. One of these is evidence that ethylene gas molecules striking a surface at very high velocities have a tendency to polymerize. A second result was the observation that ion milling could not only be used to restore a defective bolometer, but could actually be used to improve its performance. Ion milling was determined to be a simple and easily controlled method for improving the performance of a bolometer.
Document Details
- Document Type
- Technical Report
- Publication Date
- May 25, 1988
- Accession Number
- ADA200144
Entities
People
- N. T. Melamed