Effect of Finite Size on Magnetoresistance

Abstract

Finite size effects are studied for magnetoresistance in a disordered metallic system. Quantum corrections to the conductivity are strongly affected by the presence of an in-plane magnetic field in a thin film. They are also affected significantly by the boundaries of the finite quantum size. Expressions are obtained for the quantum correction to the conductivity due to both effects. The dephasing characteristic time scale due to the magnetic field is found by the exact eigenvalues of the system. One-, two- and three-dimensional results can be obtained with the proper limits. Some numerical results are presented for the given inelastic scattering length. Keywords: Magnetoresistance; Finite size effects; Metallic system; Disordered; Conductivity; Quantum corrections.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1988
Accession Number
ADA200267

Entities

People

  • H. G. Oh
  • H. R. Lee
  • Thomas F. George

Organizations

  • University at Buffalo

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Abstracts
  • Air Force
  • Chemical Compounds
  • Chemical Engineering
  • Chemistry
  • Coefficients
  • Films
  • Magnetoresistance
  • Materials
  • Materials Science
  • Military Research
  • New York
  • Perturbation Theory
  • Solid State Physics
  • Thin Films
  • United States
  • Universities

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Statistical inference.
  • Thermal Physics or Thermal Science.

Technology Areas

  • Quantum Computing