Studying Quantum Phase-Based Electronic Devices
Abstract
This report summarizes work confined to use of the moments of the density matrix, for examining transport in quantum phase based devices. There are two significant features of the approach: (1) the introduction of Bohm's quantum potential, and (2) the use of moment equations which are self-consistently coupled to Poisson's equation. There were a number of significant approximations made during this reporting period that are currently being eliminated: (1) Only two of the minimum of three moment equations have been implemented. (2) Boltsmann statistics was invoked. The results show for a double barrier structure with 500 Angstrom spacer-layers considerable structure in the charge distribution. At low values of bias and corresponding low values of current there is a buildup of charge upstream of the first barrier. As well as tunnelling into the well. At a critical value of bias a local instability of current occurs and the solutions shows a qualitative difference. Accumulation at the upstream barrier is only marginally altered, and there is a significant charge buildup in the well. The instability appears to be a precursor for this charge buildup. Keywords: Quantum potential, Density matrix, Resonant tunnelling.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 01, 1988
- Accession Number
- ADA200376
Entities
People
- H. L. Grubin
- J. P. Kreskovsky