Investigation of Defect and Electronic Interactions Associated with GaAs Device Processing
Abstract
Our research in the period Feb. 28, 1987 to Feb 29, 1988 resulted in five publications enclosed with this report and two completed Ph.D. theses. The research focussed on the properties of low diffusivity transition elements and their direct role (compensating levels) and indirect role (impurity gettering) in achieving semi-insulating III-V compounds. The results of our systematic study on optical and electronic properties of vanadium in GaAs were summarized in a detailed publication. A similar publication, dealing with properties of titanium, is under preparation. Our study established the positions of the energy levels of substitutional Vanadium and Titanium (both donor and acceptor states) and concluded that they are not suitable for achieving semi-insulating GaAs. In Inp, however, the deep Ti donor level (Ti4+/Ti3+) has an ideal location (0.63 eV below the conduction band) for producing a new type of semi-insulating Inp based on codoping with Ti and shallow acceptors. In spite of wrong energy level positions, the vanadium was found to be beneficial for obtaining semiinsulating GaAs. Gallium arsenides.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1988
- Accession Number
- ADA200541
Entities
People
- Harry C. Gatos
- Jacek Lagowski
Organizations
- Massachusetts Institute of Technology