Current Controlled Liquid Phase Epitaxial Growth of InGaASP

Abstract

The current controlled liquid phase epitaxy (CCLPE) or electroepitaxy growth technique has been successfully employed for the first time to grow lattice matched In1-xGaxAsyP1-y quaternary layers of compositions corresponding to wavelengths of 1.31 micro meters and 1.52 micrometers. The layers were grown at a constant temperature of 647 C and 685 C. The growth rate of the layers grown at 685 C were 3 to 4 times higher than those grown at 647 C. Further, layers thicker than 3-4 micro meters could not be grown at a lower growth temperature of 647 C. These have been attributed to composition instabilities in the solid system at the growth temperature of 647 C. On increasing the growth temperature to 685 C, thicker layers as high as 20 micro meters of good crystal quality have been grown.

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Document Details

Document Type
Technical Report
Publication Date
Sep 23, 1988
Accession Number
ADA200693

Entities

People

  • A. Abul-fadl
  • Srikanth Iyer

Organizations

  • North Carolina Agricultural and Technical State University

Tags

Communities of Interest

  • Advanced Electronics
  • Air Platforms

DTIC Thesaurus Topics

  • Crystal Lattice Vibrations
  • Current Density
  • Diffraction
  • Electric Current
  • Electrical Engineering
  • Electrical Properties
  • Electrons
  • Energy Bands
  • Epitaxial Growth
  • Experimental Data
  • Integrated Circuits
  • Liquid Phase Epitaxy
  • Materials Processing
  • Phase Diagrams
  • Scattering
  • Semiconductors
  • Spectra

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology