A Comment on Random Versus Non-Random Defect Placement in Polyacetylane
Abstract
The dependence of electrical transport of doped polyacetylenes on conjugation length has been a topic of debate in recent years. We do not wish to comment on this issue specifically, but rather on the synthetic approach of introducing sp(3) defects into polyacetylene through protonation or alkylation of the n-type derivative. Specifically, we address the question of the randomness of the placement of defects and its implications for carrier transport and other electronic properties. Our principal conclusion is one defect for every 10 carbons in polyacetylene. We base this conclusion on experimental results reported in the literature of our theoretical study. Keywords: Synthesis (chemistry), Doping, Alkylation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 03, 1988
- Accession Number
- ADA200807
Entities
People
- Bradley J. Orchard
- Gary E Wnek
- Stuart B. Clough
- Sukant Tripathy
- Xiao-fang Sun