III-V Compounds Trace Element Profile Analysis Using Laser Assisted Spectroscopy
Abstract
A microprobe analysis technique which has the potential for quantitative measurements of surface and bulk concentration as well as depth profiles has been investigated. This technique is termed Profile Analysis using Laser Assisted Spectroscopy (PALAS) and uses one pulsed laser to desorb or vaporize a controlled volume of the sample and a second pulsed laser to induce fluorescence in the desorbed species. The intensity of the laser induced fluorescence (LIF) provides a quantitative measure of the desorbed atom species concentration, while the energy density of the vaporizing laser controls the sampling depth. The requisite lateral resolution is provided by focusing the vaporizing laser. The purpose of the Phase I project was to demonstrate the feasibility of PALAS by making measurements of impurity and dopant concentrations in Gallium arsenide, which is a III-V material of interest to the Air Force and other defense agencies. The system did not perform as well as anticipated. A number of deficiencies with the machine as constructed were noted. Keywords: Semiconductors, Ablation.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jul 01, 1988
- Accession Number
- ADA200955
Entities
People
- A. Freedman
- C. Stinespring
- K. Mccurdy
Organizations
- Aerodyne Research