JSEP (Joint Services Electronics Program) Annual Report

Abstract

Contents: Molecular Beam Epitaxy of High Tc Superconductors, Ultra- Submicron Devices, GaAs/Si Integrated Circuits, The Chemical and Electronic Structure of Refractory Metal-GaAs Interfaces, The Study of Crystal Properties Using Channeling Radiation, Complementary MOS Device and Material Physics at 77 K, Coding for Spectrally Constrained Channels, and Real Time Statistical Signal Processing.

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Document Details

Document Type
Technical Report
Publication Date
Sep 01, 1988
Accession Number
ADA200990

Entities

People

  • James S. Harris Jr.

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Air Force
  • Chemistry
  • Communication Channels
  • Crystal Lattices
  • Crystal Structure
  • Crystals
  • Electronics Laboratories
  • Engineering
  • Materials Science
  • Measurement
  • Metal-Semiconductor-Metal Photodetectors
  • Modules (Electronics)
  • Power Electronics
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Three Dimensional

Fields of Study

  • Physics

Readers

  • Semiconductor Device Technology
  • Technical Research and Report Writing.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene