Determination of General and Specific Properties of Wide Energy-Band Gap HgCdTe in the 1 to 2 Micrometer Wavelength Range
Abstract
The metallurgical process of Wide Band Gap Mercury Cadmium Telluride (WBHCT) compound fabrication is briefly reviewed. Special emphasis is given to the Traveling Heater Method (THM) for HgCdTe growth. Physical and electronic properties are analyzed with particular attention to properties that apply to optoelectronic devices. Some special features, such as low intrinsic concentration, low band gap temperature coefficient and matching of band gap to spin orbit coupling appear to be of particular and unique interest in the fabrication of avalanche photodiodes (APD) in this spectral region. Electroluminescent properties have also been investigated. Light-emitting structures are discussed. Wide energy band gap, Mercury cadmium tellurides, Infrared detection, Traveling heater method, Bulk material, Physical properties, Optical properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Sep 09, 1988
- Accession Number
- ADA201341
Entities
People
- A. Durand
- F. Raymond
- M. Royer
- T. Nguyen-duy