Optical and Electrical Properties of Co-Sputtered Semiconductors and Metal-Insulator Films
Abstract
The objective of the investigation was the study of thin films prepared mostly by sputtering techniques. Specifically, the objectives include (a) the investigation of the optical and electrical properties of hydrogenated amorphous semiconductor alloys and the effect on these properties of the mode of preparation, and (b) the study of surface plasmons on silver with the view of gaining further understanding of surface enhanced Raman scattering. One of the most important parameters in an amorphous semiconductor alloy system is the alloy composition. To determine this parameter the method of Auger depth profiling was used. Upon closer examination of this method, some problems were found that affect the accuracy of the determination of the alloy composition from auger measurements. Because of the widespread use of Auger spectroscopy for quantitative analysis, certain aspects of Auger electron spectroscopy were investigated. In addition, it was also necessary to include some work on crystalline semiconductors (Si and ZnO). Keywords: Semiconductors, Metal- Insulator films, Thin films, Sputtering techniques, Semiconductor alloys, Surface plasmons, Silver, Optical properties, and Electrical properties.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1988
- Accession Number
- ADA201411
Entities
People
- James A. Muir
- Manuel Gomez-rodriguez
- Zvi S. Weisz
Organizations
- University of Puerto Rico