Development of Si/SiGe Heterostructures

Abstract

With the recent advances in Si molecular beam epitaxy (MBE) and limited-reaction processing (LRP), a viable, heterojunction-based device technology for Si may soon be at hand. Strained-Layer Si1-xGex epitaxial alloy films and coherently strained Si1-xGex/Si multilayer structures have been grown very successfully by MBE. More recently, high quality Si/Si1-xGex/Si heterojunction bipolar transistors (HBT) having been fabricated by LRP techniques. Si 1-xGex/Si systems are of considerable interest because they provide Si-based semiconductor device technology with a practical heterojunction capability which is also compatible with exiting device processing techniques. Keyword: Semiconductors.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1988
Accession Number
ADA201440

Entities

People

  • R. J. Hauenstein

Organizations

  • HRL Laboratories

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Structures
  • Bipolar Junction Transistors
  • Contracts
  • Diffraction
  • Electron Mobility
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Heterojunction Bipolar Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Measurement
  • Semiconductor Devices
  • Semiconductors
  • Transistors
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology

Technology Areas

  • Microelectronics