Photoassisted Deposition of Silicon Dioxide from Silane and Nitrogen Dioxide

Abstract

Three new reactions for depositing silicon dioxide at low temperatures using vacuum ultraviolet and ultraviolet radiation to initiate a reaction between silane and nitrogen dioxide have been developed. The optical and electrical properties of these films are reported. The effect of ion implantation on the infrared spectra of oxides grown by vacuum ultraviolet irradiation is also presented. Keywords: Photochemical deposition; Silicon dioxide; Silane; Nitrogen dioxide; ion implant; Effects; Silicon dioxide films.

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Document Details

Document Type
Technical Report
Publication Date
Sep 30, 1988
Accession Number
ADA201642

Entities

People

  • Jeffrey Marks
  • Robert C. Bowman Jr.
  • Ruby E. Robertson

Organizations

  • The Aerospace Corporation

Tags

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Electrical Properties
  • Flow Rate
  • Frequency
  • Infrared Spectra
  • Ion Implantation
  • Lamps
  • Low Temperature
  • Nitrogen Oxides
  • Optical Properties
  • Radiation
  • Refraction
  • Refractive Index
  • Silicon Compounds
  • Silicon Dioxide
  • Spectra
  • Vapor Deposition

Readers

  • Electrochemical Engineering/ Fuel Cell Technologies
  • Thin Film Deposition Science.