Ion Mixing of Ti and TiO(y) Films on SiO(x)

Abstract

The influence of ion implantation on the interfacial chemistry, morphology, and adhesion of Ti and TiOy films on Siox was examined. The Ti/SiOx and TiOy/SiOx specimens were implanted with varying doses of 84Kr+ at different substrate temperatures (2 x 10 to the 16th Kr/sq. cm at 70 C, 1 x 10 to the 17th Kr/sq. cm. at 70 C, and 1 x 10 to the 17th Kr/sq. cm. at 350 C). These 84Kr+- implanted specimens were compared to specimens vacuum annealed at 1000 C for 3600 s. Ion implantation intermixed interfacial Ti, Si, and O in both the Ti/ SiOx and Tioy/Siox specimens, producing interfacial Ti-Si oxide layers. Ion implantation, Spectroscopy, X ray diffraction, Interfacial mixing, Titanium oxides, Silicon oxides.

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Document Details

Document Type
Technical Report
Publication Date
Nov 04, 1988
Accession Number
ADA201687

Entities

People

  • A. A. Galuska
  • J. C. Uht
  • J. M. Coggi
  • P. M. Adams

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemistry
  • Classification
  • Diffraction
  • Failure Mode And Effect Analysis
  • Films
  • Implantation
  • Ion Implantation
  • Ions
  • Materials
  • Materials Science
  • Oxidation
  • Oxide Films
  • Oxides
  • Scattering
  • Spectra
  • X Rays
  • X-Ray Diffraction

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.