Application of Quantum 1/F Noise Theory to Hg(1-x)Cd(x)Te Infrared Detectors
Abstract
The objective of this program was the application of quantum 1/f theory to infrared detectors and suggestion of possible improvements. Both Hg(1- x)Cd(x)Te n+p junctions and MIS structures have been studied as infrared detectors on the basis of the Quantum 1/f Noise approach. The quantum 1/f theory predicts both a proportionality of 1/f noise to the reciprocal lifetime of the carriers, and a peculiar analytical dependence on the bias voltage. Both relations have received excellent experimental verification with the help of A. van der Ziel of the University of Minnesota and his group, and with the help of my assistant Q. Peng. A high frequency impedance measurement method was developed for measuring the lifetime of the carriers accurately. A numerical code was developed for the calculation of noise, including quantum 1/f noise, in infrared detector junctions. The quantum 1/f theory predicts higher 1/f noise in the surface recombination current than in the bulk recombination current, due to both the surface potential jump and the current concentration effect. Previous studies of Kleinpenning had included only an empirical mobility fluctuation effect (Hooge formula), ignoring the recombination speed fluctuations which arise on equal footing with mobility fluctuations in the quantum 1/f theory. Our first principle quantum 1/f calculation led to suggestions for noise reductions.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jun 25, 1988
- Accession Number
- ADA201702
Entities
People
- Peter H. Handel
Organizations
- Battelle Memorial Institute