Fundamental Studies and Device Development in Beta Silicon Carbide.
Abstract
The primary thrust of research of this period has been to deposit and characterize the contact materials of TaSi2 and Al on n- and p-type material, respectively. Auger electron spectroscopy detected some oxygen throughout the thickness of these films. Current voltage characteristics were non-linear and highly resistive due to oxygen contamination in the films. A new ultra-high vacuum deposition chamber is being constructed to deposit pure contacts. Rectifying contacts of Gold, Platinum, and PtSix were also studied. Pt surpassed Au in its rectifying properties. Ion implantation into alpha and beta silicon carbide at room temperature and 550C were also conducted. A new capacitance voltage system was purchased and commissioned. (JES)
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 31, 1988
- Accession Number
- ADA201833
Entities
People
- Robert F Davis
Organizations
- North Carolina State University