Ferroelectric Memories

Abstract

Ferroelectric memory cells have been fabricated using a process compatible with semiconductor VLSI manufacturing techniques. The memory can be made NDRO for strategic and SDI systems using several techniques; the most practical is probably a rapid read/restore in combination with EDAC software. This memory can replace plated wire and will have substantial advantages in cost, weight, size, power and speed. It provides a practical cost-competitive solution to the need for nonvolatile RAM in all hardened tactical, avionic, and space systems. Keywords include; Ferroelectric memory and Nonvolatile RAM.

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Document Details

Document Type
Technical Report
Publication Date
Jun 20, 1988
Accession Number
ADA201851

Entities

People

  • George C. Messenger

Tags

Communities of Interest

  • Advanced Electronics
  • Space
  • Weapons Technologies

DTIC Thesaurus Topics

  • Air Force
  • Crystal Structure
  • Curie Temperature
  • Defense Systems
  • Dielectric Permittivity
  • Fabrication
  • Ferroelectric Materials
  • Films
  • Integrated Circuits
  • Materials
  • Military Research
  • Plastic Explosives
  • Radiation Effects
  • Security
  • Semiconductor Devices
  • Semiconductors
  • Test And Evaluation

Readers

  • Integrated Circuit Design and Technology.
  • Software Engineering

Technology Areas

  • Microelectronics
  • Space