2-6 Semiconductor Superlattices

Abstract

The research program is directed toward achieving controlled substitutional doping of the wid bandgap semiconductor ZnSe, ZnSe alloys, and ZnSe-based heterostructures. To achieve this goal the incorporation processes involved in the molecular beam epitaxial and atomic beam epitaxial growth techniques are under study by comparing the experiments with the results of Monte Carlo simulations. As a first approach the n-type doping of zinc selenide with gallium has been investigated and analysed by both optical (photoluminescence) and electrical (Hall effect) characterization.

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Document Details

Document Type
Technical Report
Publication Date
Oct 18, 1988
Accession Number
ADA202369

Entities

People

  • Leslie A. Kolodziejski
  • Nobuo Otsuka
  • Robert L. Gunshor
  • Supriyo Datta

Organizations

  • Purdue University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Compound Semiconductors
  • Crystal Growth
  • Dye Lasers
  • Electron Microscopes
  • Electronics Laboratories
  • Energy Bands
  • Epitaxial Growth
  • Materials
  • Materials Engineering
  • Materials Science
  • Molecular Beams
  • Monte Carlo Method
  • Optical Properties
  • Power Electronics
  • Quantum Wells
  • Semiconductors
  • Solid State Physics

Fields of Study

  • Materials science

Readers

  • Computational Modeling and Simulation
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics