MBE of (Hg,Cd)Te
Abstract
The work sponsored under this contract has centered on the molecular beam epitaxial growth of InSb/CdTe heterojunctions and multilayer structures, and on (Zn,Cd)Te/CdTe strained layer superlattices. We have been the first to demonstrate the molecular beam epitaxial growth of InSb/CdTe superlattices at temperatures necessary for the growth of electrical active InSb. An indication of the progress in this III-V/II-VI mixed system is the first observation of the quantum hall effect (QHE) in the InSb/CdTe heterojunction, by Simon Greene at the Cavendish Laboratory. As a result of the demonstration of a 2DEG and the ability to grow InSb/CdTe superlattices, the realization of infrared lasers and detectors in the 3-5 micro region has been significantly enhanced. We have reported the growth of a novel semiconducting material In2Te3. Work on the II-IV material compounds has centered on the growth of (Zn, Cd)Te/CdTe strained layer superlattices that have the layer thickness ratios and Zn composition tailored to allow the in-plane lattice parameter match that of Hg(0.8)Cd(0.2)Te.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 01, 1988
- Accession Number
- ADA202448
Entities
People
- M. Pepper
- T. D. Golding
Organizations
- University of Cambridge