Continued Development and Characterization of Doped Layers, Contacts and Associated Electronic Devices in Silicon Carbide
Abstract
The primary thrust of research of this period has been to deposit and characterize the contact materials of TaSi2 and A1 on n- and p-type material, respectively. Auger electron spectroscopy detected some oxygen throughout the thickness of these films. Current voltage characteristics were non-linear and highly resistive due to oxygen contamination in the films. A new ultra-high vacuum deposition chamber is being constructed to deposit pure contacts. Rectifying contacts of Au, Pt, and PtSix were also studied. Pt surpassed Au in its rectifying properties. Ion implantation into alpha and beta SiC at room temperature and 550 C were also conducted. A new capacitance voltage system was purchased and commissioned.
Document Details
- Document Type
- Technical Report
- Publication Date
- Oct 31, 1988
- Accession Number
- ADA202450
Entities
People
- Robert F Davis
Organizations
- North Carolina State University