Time Resolved Photoluminescence of Ytterbium in Indium Phosphide.
Abstract
Time resolved photoluminescence of ytterbium (Yb) implanted in indium phosphide (Inp) was the primary emphasis of this research. The decay lifetimes of the 1002 nm Yb emission were investigated as a function of temperature. Initial attempts were made to investigate as a function of temperature. Initial attempts were made to investigate aluminum gallium arsenide (AlGaAs) implanted with ytterbium. Theses. (mjm)
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1988
- Accession Number
- ADA202596
Entities
People
- Thad F. Bumgarner
Organizations
- Air Force Institute of Technology