The Use of Tris(trimethylsilyl)arsine to Prepare AlAs, GaAs and InAs. The X-Ray Crystal Structure of (Me3Si)3AsAlCl3.C7H8.

Abstract

The reactions of (Me3Si)3As with group III halides have been utilized to prepare A1As, GaAs and InAs. The adduct (Me3Si)3AsA1C13 has been isolated as an intermediate in the formation of A1As from (Me3Si)3As and A1C13. The crystal structure of its toluene solvate has been determined. Keywords: Aluminum arsenide, Gallium arsenide, Indium arsenide, Preparation, Crystal structure, Silyl radicals. (MJM)

Document Details

Document Type
Technical Report
Publication Date
Dec 12, 1988
Accession Number
ADA202723

Entities

People

  • Andrew P Purdy
  • Andrew T. McPhail
  • Colin G. Pitt
  • Richard L. Wells
  • Soheila Shafieezad

Organizations

  • Duke University

Tags

DTIC Thesaurus Topics

  • Absorbers (Materials)
  • Advanced Materials
  • Aluminum
  • Chemical Compounds
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Electronics
  • Elements
  • Engineered Materials
  • Gallium
  • Gallium Arsenides
  • Group 13 Elements
  • Materials
  • Metals
  • Post-Transition Metals
  • X Rays

Fields of Study

  • Chemistry

Readers

  • Materials Science and Engineering.
  • Polymer Science and Technology
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics