Investigation of the Impedance Modulation of Thin Films with a Chemically-Sensitive Field-Effect Transistor
Abstract
This study resulted in the design and fabrication of a Chemically- Sensitive Field-Effect Transistor (CHEMFET) with an interdigitated gate electrode structure. The electrical performance of the CHEMFET, both in the time-domain and frequency domain, was evaluated for detecting changes in the molecular structure and chemical composition in three thin films: an epoxy, copper phthalocyanine (CuPc), and acetylcholinesterase (ACHE). The change in the chemical state of a film was manifested as a change in the electrical impedance of the interdigitated gate electrode structure. For the epoxy, its molecular structure changed as a result of the curing reaction. To induce a change in the chemical state of the CuPc and ACHE films they were exposed to part-per billion concentrations of a challenge gas, either nitrogen dioxide (NO2) or the the organophosphorus compound, diisopropyl methylphosphonate (DIMP). The results clearly show that the CHEMFET can detect chemical and structural changes in an epoxy and CuPc film. The sensitivity of the ACHE film was not unequivocally determined due to long term drift in the ACHE film's electrical properties. The most remarkable result of this effort was the demonstration of a unique selectivity feature in the CHEMFET's frequency dependent response to a challenge gas. The examination of the relative changes in the electrical properties of the CHEMFET at different frequencies showed that the CHEMFET can be used to distinguish between NO2 and Dimp EXPOSURE. Theses.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 05, 1988
- Accession Number
- ADA202766
Entities
People
- John M. Wiseman
Organizations
- Air Force Institute of Technology