Theoretical Studies of Heterogeneous Reactions in Silicon CVD (Silicon Vapor Deposition) Catalysis

Abstract

The results of a theoretical/computational research program to develop new methods and to investigate the chemical dynamics of various elementary homogeneous and heterogeneous processes occurring in the chemical vapor deposition of silicon form silane are described. The types of elementary processes we have studied include: Unimolecular dissociation of isolated gas- phase molecules and radicals, silicon clustering, gas-surface scattering, chemisorption, processes, diffusion on silicon surfaces, bimolecular gas-phase reactions, and tunneling in H-atom diffusion on silicon surfaces. Much of the research was done using standard classical trajectory methods. Monte Carlo variational phase-space and transition-state theories, which were developed in this research program were used to study processes that occur on long timescales. Silicon, Chemical vapor deposition, Silane solar cells.

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Document Details

Document Type
Technical Report
Publication Date
Oct 25, 1988
Accession Number
ADA202905

Entities

People

  • Donald L. Thompson
  • Lionel M. Raff

Organizations

  • Oklahoma State University–Stillwater

Tags

Communities of Interest

  • Energy and Power Technologies
  • Materials and Manufacturing Processes

DTIC Thesaurus Topics

  • Adsorption
  • Air Force
  • Angular Momentum
  • Chemical Kinetics
  • Chemical Reaction Properties
  • Chemical Reactions
  • Chemical Vapor Deposition
  • Chemistry
  • Dissociation
  • Energy
  • Energy Transfer
  • Experimental Data
  • Molecules
  • Potential Energy
  • Scattering
  • Trajectories
  • Vapor Deposition

Fields of Study

  • Chemistry

Readers

  • Computational Fluid Dynamics (CFD)
  • Molecular Photonics/Laser Physics
  • Thin Film Deposition Science.

Technology Areas

  • Space