Distribution of Boron Atoms in Ion Implanted Compound Semiconductors

Abstract

The nondestructive neutron depth profiling (NDP) technique has been used to measure the boron (10B) distributions in GaAs, CdTe, Hg0.7Cd0.3Te, and Hg0.85Mn0.15Te after multiple energy ion implants. The NDP results are found to be in good agreement with the theoretical ion ranges obtained from Monte Carlo computer simulations. Only minor changes in the boron profiles were seen for the chosen annealing conditions. Keywords: Ion implantation, Gallium arsenides, Cadmium tellurides, Mercury compounds, Boron.

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Document Details

Document Type
Technical Report
Publication Date
Nov 22, 1988
Accession Number
ADA203173

Entities

People

  • J. F. Knudsen
  • R. C.. Bowman Jr.
  • R. E. Kremer
  • R. G. Downing

Organizations

  • The Aerospace Corporation

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Agreements
  • Annealing
  • Availability
  • Classification
  • Commercial Equipment
  • Compound Semiconductors
  • Computational Science
  • Computer Simulations
  • Crystals
  • Detectors
  • Identification
  • Ions
  • Materials
  • Security
  • Semiconductors
  • Simulations
  • Standards

Fields of Study

  • Materials science

Readers

  • Solar Physics
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene