Quantum Phenomena in Semiconductor Structures
Abstract
The research investigated the electronic properties of small semiconductor devices where transport is dominated or affected by quantum phenomena. Topics investigated included small silicon MOS transistors, here it is shown that large, intrinsic, stresses affect transport in the two dimensional inversion layer. As the stress is at the edge of the device, it is not significant for larger structures. The electron-phon interaction in epitaxial layers of GaAs has been investigated using Schottky gate FETs (MESFETs) here it is shown that the nature and interpretation of magnetophonon oscillations is strongly affected by the geometry of the sample. Studies of small samples were extended to one dimensional GaAs-AlGaAs heterojunctions where it was shown that varying the width at low temperatures resulted in large random conductance fluctuations, these were fitted to the appropriate theory. Quantum corrections to the conductivity and Hall effect were investigated in a range of III-V semiconductors, and, in a new development, a technique of electrostatic squeezing was developed to investigate quantum interference in a ring of electron gas in a GaAs-AlGaAs heterojunction. A description is given of measurements and analysis of electronic transport in MBE grown InSb. Keywords: Quantum effects, Semiconductor heterojunctions, Quantum interference, Magnetophonon effect.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 13, 1988
- Accession Number
- ADA203315
Entities
People
- M. Pepper
Organizations
- University of Cambridge