Formation of Refractory and Near Noble Metal Silicides by Fast Radiative Processing

Abstract

Thin films of WSi2 with resistivities of 30-35 microohms-cm (among the lowest reported) have been formed by sputter depositing W metal onto (100)Si wafers. The samples were fast radiatively processed under high vacuum to time anneals ranging from 15-50 sec. at two temperatures (1100 C and 1150 C). The growth process has been shown to be diffusion controlled, with the median grain size correlating with film resistivity. Keywords: Silicides, Metallization schemes, Tungsten silicide, Silicon.

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Document Details

Document Type
Technical Report
Publication Date
Nov 30, 1988
Accession Number
ADA203428

Entities

People

  • Jorge J. Santiago-aviles

Organizations

  • University of Puerto Rico

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Auger Electron Spectroscopy
  • Auger Electrons
  • Diffraction
  • Electron Spectroscopy
  • Films
  • High Temperature
  • High Vacuum
  • Mass Spectrometry
  • Materials
  • Metals
  • Puerto Rico
  • Refractory Metals
  • Spectrometry
  • Students
  • Temperature Gradients
  • Thin Films
  • Very Large Scale Integration

Readers

  • Mathematics or Statistics
  • Thin Film Deposition Science.