Fundamental and Practical Studies of Metal Contacts on Mercury Zinc Telluride

Abstract

Metal/Mercury Cadmium Tellurium interfaces generally are characterized by profound intermixing of the semiconductor components and severe Hg loss upon metal deposition. The resulting disruption and interfacial instabilities at the interface prove deletorious to device stability and performance. During this reporting period, we have initiated several experimental studies pertinent to a greater understanding of the role of the weak Hg-Te bonding during interface formation. The behavior of metal contacts on HgCdTe and HgZnTe has also been examined in a theoretical study, in order to gain fundamental insight into mechanisms of Fermi level movement in these alloys. In this report we describe in detail results of these studies. Semi conductors.

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Document Details

Document Type
Technical Report
Publication Date
Dec 31, 1987
Accession Number
ADA203584

Entities

People

  • William E. Spicer

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Band Gaps
  • Band Spectra
  • Band Structures
  • Chemical Reactions
  • Conduction Bands
  • Electrical Measurement
  • Electrical Properties
  • Energy Bands
  • Energy Levels
  • Equations
  • Low Temperature
  • Measurement
  • Metal-Semiconductor Junctions
  • Semiconductor Devices
  • Semiconductors
  • Valence Bands
  • X Rays

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene