Laser-Induced Metal Deposition on Semiconductors from Liquid Electrolytes
Abstract
Maskless deposition of gold and copper from electrolyte solutions onto n-doped semiconductors (GaAs, Si) is investigated. The metal deposits are found to have lateral dimensions of about 1 micro and are in barrier contact with the semiconductor. The proposed deposition mechanism is governed by the electric fields resulting from the Dember effect, the p-n junction and the thermal emf. Maskless Deposition, Laser induced, Metal, Semiconductors, Liquid electrolytes, Micron lateral dimensions, Dember effect, Gallium arsenides silicon.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 01, 1988
- Accession Number
- ADA203612
Entities
People
- B. S. Luk'yanchuk
- Daniel A. Jelski
- F. V. Bunkin
- G. A. Shafeev
- I. Hevesi
- L. Nanai
- M. R. Brook
- Thomas F. George
- Z. C. Wu
Organizations
- University at Buffalo