In-Situ Diffraction and Imaging Studies of Hetero-Epitaxial Growth of Semiconductors

Abstract

We are building a high resolution, energy filtered reflection high energy electron diffraction (RHEED) instrument for use in studying epitaxial growth, primarily in semiconductor strained layer systems, such as germanium silicon. This instrument is now at a minimal operational stage. Secondly, we are continuing in-situ studies of reactions in ultrathin (<100 A) films during annealing, using primarily an ultrahigh vacuum scanning electron microprobe instrument. To this end, we have developed special methods for analyzing RHEED patterns, and for numerical fitting of Auger lineshapes to determine stoichiometry.

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Document Details

Document Type
Technical Report
Publication Date
Jan 31, 1989
Accession Number
ADA204122

Entities

People

  • John A. Venables
  • Peter A. Bennett

Organizations

  • Arizona State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Classification
  • Diffraction
  • Electron Diffraction
  • Electron Microscopes
  • Energy
  • Epitaxial Growth
  • High Resolution
  • Identification
  • Microprobes
  • Phase
  • Phase Diagrams
  • Phase Transformations
  • Security
  • Semiconductors
  • Thin Films
  • Transition Temperature
  • Transitions

Fields of Study

  • Physics

Readers

  • Aerospace Test and Evaluation
  • Electrochemical Engineering/ Fuel Cell Technologies
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene