High-Quality Three-Dimensional Electron Gases in Semiconductors
Abstract
An effort is begun to make high quality three-dimensional electron gases in semiconductors. These structures are made by molecular beam epitaxy techniques using modulation doping to reduce impurity scattering and compositional grading techniques to control charge density profiles. We are collaborating with Harvard for high field and low temperature measurements and for search for electronic ordering phenomena. We are working with groups at Santa Barbara for probing the structures optically and looking for infrared frequency properties of the materials.
Document Details
- Document Type
- Technical Report
- Publication Date
- Jan 03, 1989
- Accession Number
- ADA204259
Entities
People
- Arthur C. Gossard
Organizations
- University of California, Santa Barbara