Gas Source Molecular Beam Epitaxy Deposition of Device Quality Gallium Nitride

Abstract

Deposition of the first layers of gallium nitride will occur by the end of February. We have spent the last six months assembling our experimental equipment which includes selecting and ordering a plasma activated nitrogen source, building a nitrogen delivery system and bringing up our gas source MBE. A brief report of our research goals for GaN is given.

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Document Details

Document Type
Technical Report
Publication Date
Feb 10, 1989
Accession Number
ADA204359

Entities

People

  • Hadis Morkoç

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Band Gaps
  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Crystal Structure
  • Crystals
  • Energy Bands
  • Gallium Nitrides
  • Materials
  • Military Research
  • Molecular Beam Epitaxy
  • Molecular Beams
  • Nitrogen
  • Semiconductor Devices
  • Semiconductors
  • Silicon Carbide
  • Thermal Conductivity
  • Ultraviolet Detectors

Readers

  • Materials Science and Engineering.
  • Plasma Physics.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics