Characterization of the Mechanisms Producing Bending Moments in Polysilicon Micro-Cantilever Beams by Interferometric Deflection Measurements
Abstract
Polysilicon micro cantilever beams and doubly supported beams are fabricated and conditioned with phosphorus doping and high temperature anneal cycles to assess the effects of process history and geometry on polysilicon microstructure rigidity. Using a Linnik interferometer, deflection trends for series of beams are measured and compared for several process conditions. Two bending moments can induce beam deflection: the first due to the beam boundary support, and the second, due to stress nonuniformity through the beam thickness. A comparison of polysilicon microstructure deflection behavior for doping and annealing conditions is presented and discussed.
Document Details
- Document Type
- Technical Report
- Publication Date
- Nov 01, 1988
- Accession Number
- ADA204400
Entities
People
- Jiahua Huang
- Martin A. Schmidt
- Stephen D. Senturia
- Theresa A. Lober
Organizations
- Massachusetts Institute of Technology