Formation and Analysis of Shallow Arsenic Profiles

Abstract

Shallow arsenic implants were activated by furnace and rapid thermal annealing (RTA). Comparisons of junction depths measured by secondary ion mass spectrometry (SIMS) and spreading resistance (SR) showed SIMS values 50-90 nm deeper than SR values, due to ion knock-on during SIMS profiling. Ion beam technology, Electronic devices, Components, Subsystems. Reprints.

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Document Details

Document Type
Technical Report
Publication Date
Jul 07, 1988
Accession Number
ADA204798

Entities

People

  • S. R. Clayton

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Annealing
  • Availability
  • Bipolar Junction Transistors
  • Computers
  • Electronics
  • High Temperature
  • Ion Beams
  • Ion Implantation
  • Ion Sources
  • Ions
  • Mass Spectrometry
  • Measurement
  • Molecular Beam Epitaxy
  • Semiconductor Devices
  • Semiconductors
  • Spectrometry

Fields of Study

  • Materials science

Readers

  • Molecular Photonics/Laser Physics
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics