Process Challenges in Compound Semiconductors.
Abstract
Compound semiconductors, such as GaAs, InP, and HgCdTe, are essential components in future photonics and microelectronics technologies. If the United States is to be competitive in these technologies, attention must be directed to the reproducible and affordable processing of these materials. This report assesses the current status of compound semiconductor processing technology and identifies factors that limit the ability to fabricate advanced electronic and optoelectronic devices. Emphasis is placed on current and near-term devices, but the process technologies discussed are generic to future components and systems based on these materials. Keywords: Compound semiconductors, Galium arsenide, Mercury cadmium telluride, Indium phosphide, Semiconductor processing, Device fabrication, Process technologies, Process modelling, Substrates, Transistor structures, Interconnections, Crystal growth, Epitaxial structures, Epitaxial growth, Etching, Lithography, Ion implantation, Dielectrics, Process diagnostics, Process environment.
Document Details
- Document Type
- Technical Report
- Publication Date
- Aug 01, 1988
- Accession Number
- ADA204868