GaAs/AlGaAs Electronics and InGaAs(P) Optoelectronics on InP Substrates by Gas Source MBE
Abstract
We have grown AlGaAs/GaAs heterojunction bipolar transistors (HBTs ) on InP. These AlGaAs/GaAs HBTs have been successfully fabricated on InP by incorporating InGaAs/GaAs strained layer superlattice in the buffer structure. Current gain from these HBTs on InP (about 30) is found to be generally smaller that that form AlGaAs/GaAs HBT on GaAs. PL studies of the GaAs buffer layer of a field-effect transistor layer on InP indicates that, of the five observable peaks, the excitonic transition at 1.513 eV has been identified with the help of optical reflection, absorption, and temperature dependent PL measurements. The optical absorption spectra of coupled asymmetric quantum wells have been studied to assess their possible use as optical modulators. Optical transmission measurements on a series of structures consisting of GaAs well coupled to an InGaAs well indicates the possibility of achieving quenching of exciton signal at a relatively low bias. Theoretical investigations have been carried out of the I-V characteristics of ion-implanted long-channel and short-channel photo- MESFETs. While gradual channel approximation has been used to model and analyze the long-channel MESFETs, the saturation of electron velocity due to high electric field has been taken into consideration in modeling and analyzing the characteristics of short-channel MESFETs.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 12, 1989
- Accession Number
- ADA204999
Entities
People
- Hadis Morkoç
Organizations
- University of Illinois Urbana–Champaign