Indium(III) Compounds Containing the Neopentyl Substituent, In(CH2CMe3) 3, In(CH2CMe3)2Cl, In(CH2CMe3)Cl2 and In(CH2CMe3)2CH3. The Crystal and Molecular Structure of Dichloroneopentylindium(3), an Inorganic Polymer
Abstract
Organometallic chemical vapor deposition (OMCVD) is one of the most useful techniques for making compound semiconductors such as InP. The most desireable organometallic sources for OMCVD should be easily prepared,readily purified volatile liquids with excellent stability at room temperature. A number of homoleptic organoindium (III) compounds (InR3 R=Me, 3 Et, 4,5 n-Pr, 5 i-Pr, 5 n-Bu, 5 i-Bu, 5 s-Bu, 5 t-Bu 6 and Ch2SiMe3 7) are known but only InMe3 and InEt3 are readily available for use in electronic applications. However, neither InMe3 nor InEt3 has all of the desireable physical properties. Trimethylindium has the disadvantage of being a solid with a relatively high melting point of 89.5 C. In contrast, triethylindium is a liquid at room temperature (mp -32 C) but the presence of beta-hydrogen atoms on the ligands reduces its thermal stability. Both compounds have the disadvantage of being prepared by relatively involved time-consuming procedures. In an attempt to provide alternative indium sources which can be prepared and purified easily, the chemistry of indium compounds with neopentyl ligands was investigated.
Document Details
- Document Type
- Technical Report
- Publication Date
- Feb 24, 1989
- Accession Number
- ADA205011
Entities
People
- Ella F. Spiegel
- John P. Kopasz
- O. T. Beachley Jr.
- Robin D. Rogers
Organizations
- University at Buffalo