Picosecond Optical Electronics

Abstract

A technique permitting picosecond probing of internal nodes of GaAs integrated circuits has been developed. Bandwidths greater than 200 GHz are attained with 1.25 picosecond 1.06 micron optical pulses. The noise, bandwidth, and sensitivity have been examined in microwave probe station, oscilloscope display of time waveforms, and vector readouts for S-parameter measurements provide a simple user interface for the probe. Measurements have been made on digital circuits up to 18 GHz, microwave circuits and lines to 100 GHz, and novel structures to 3 picoseconds. An on-probe quintupler extends the range of available coplanar electrical excitation to 100 GHz.

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Document Details

Document Type
Technical Report
Publication Date
Aug 01, 1988
Accession Number
ADA205075

Entities

People

  • David M. Bloom

Organizations

  • Stanford University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Digital Circuits
  • Electronics Industry
  • Electronics Laboratories
  • Field Effect Transistors
  • Integrated Circuits
  • Laser Pulses
  • Lasers
  • Millimeter Waves
  • Modules (Electronics)
  • Optical Properties
  • Optics
  • Power Electronics
  • Refractive Index
  • Repetition Rate
  • Semiconductors
  • Waveforms

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics