Study of Quantum Mechanical Effects in Deep Submicron, Grating-Gate Field Effect Transistors

Abstract

This research program investigates the effect of extreme submicron spatial modulation of the electrostatic potential on the transport of 2-D electrons in silicon and in III-V heterojunction semiconductor devices. The test vehicle is the so-called periodic gate FET (PGFET), with gates consisting of either a grating or a grid, with 200 nm periodicity. When electrons are made to move in a direction perpendicular to the potential modulation, i.e., perpendicular to the grating or (along the grid axis), they exhibit a surface superlattice (SSL) effect. When moving along the potential modulation electrons are restricted to only one degree of freedom and thus constitute a quasi-one-dimensional (Q1D) system . Grid-gate FET's have been found to exhibit substantially stronger SSL behavior than their grating-gate counterparts. Finally, electron transport in quantized and spatially periodic systems has been studied theoretically and new insights and quantitative calculations have been obtained.

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Document Details

Document Type
Technical Report
Publication Date
Jan 06, 1989
Accession Number
ADA205140

Entities

People

  • Dimitri A Antoniadis
  • Henry I. Smith

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Electrical Engineering
  • Electron Density
  • Electrons
  • Energy Bands
  • Fermi Levels
  • Field Effect Transistors
  • Free Electrons
  • High Electron Mobility Transistors
  • Modulation
  • Scattering
  • Semiconductor Devices
  • Semiconductors
  • Test Vehicles
  • Transistors
  • Transport Ships
  • Two Dimensional
  • X Rays

Fields of Study

  • Physics

Readers

  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing