Characterization of Diffusion Barriers for Metallization Systems
Abstract
A search for effective diffusion barriers for semiconductor metallization systems that was carried out under this contract and can be conveniently classified in two categories: Diffusion barriers that are thermodynamically stable with respect to reactions with the underlying substrate and the overlying metal film, and diffusion barriers that are thermodynamically unstable with respect to these adjacent media. Two contacting systems have been used as prototypes: Silicon with an aluminum metallization, and GaAs with Ag or Au metallization. This report contains the results of this effort. Diffusion barriers, Metallization systems, Semiconductors, Metal film, Thermodynamic stability.
Document Details
- Document Type
- Technical Report
- Publication Date
- Dec 30, 1988
- Accession Number
- ADA205170
Entities
People
- Marc A. Nicolet
Organizations
- California Institute of Technology