Single-Crystal Films of Semiconductors on Amorphous Substrates Via a Low Temperature Graphoepitaxy

Abstract

The objective of this program was to carry out basic research on the phenomenon of surface energy driven secondary grain growth (SEDSGG) in thin films on amorphous substrates with surfaces which were planar as well as surfaces with artificial topography. Means of enhancing grain boundary mobility, such as ion bombardment, doping, and rapid thermal annealing were investigated. Theoretical models for SEDSGG were developed. The role of surface energy and surface topography in SEDSGG was characterized and understood.

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Document Details

Document Type
Technical Report
Publication Date
Apr 14, 1988
Accession Number
ADA205200

Entities

People

  • Henry I. Smith

Organizations

  • Massachusetts Institute of Technology

Tags

Communities of Interest

  • Air Platforms
  • Energy and Power Technologies

DTIC Thesaurus Topics

  • Air Force
  • Computers
  • Crystals
  • Engineering
  • Films
  • Germanium
  • Grain Boundaries
  • Grain Growth
  • Grain Size
  • Low Temperature
  • Massachusetts
  • Materials
  • Materials Science
  • Phase Transformations
  • Semiconductors
  • Thin Films
  • Transitions

Fields of Study

  • Materials science

Readers

  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene