Fundamental Studies and Device Development in Beta Silicon Carbide

Abstract

Studies in this time period have been concerned with the doping of 6H-alpha SiC with Al and the development of fabrication schemes for several high frequency and high power device structures. The atomic concentration and the p- type carrier concentration have been determined. The former has a maximum of approximately 2 x 20E19. The carrier concentration is approximately 500 times less than the atomic concentration at all concentration levels. A variety of devices and fabrication schemes have been designed including those for MESFETs, IMPATT diodes, Shockley diodes and heterostructure bipolar transistors. Research concerned with making these devices is now ongoing. Keywords: Silicone carbide; Silicon alloys; Electronic equipment.

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Document Details

Document Type
Technical Report
Publication Date
Feb 16, 1988
Accession Number
ADA205320

Entities

People

  • Robert F Davis

Organizations

  • North Carolina State University

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Bipolar Junction Transistors
  • Ceramic Materials
  • Chemical Vapor Deposition
  • Diodes
  • Electronic Equipment
  • Electronics Laboratories
  • Fabrication
  • Films
  • Mass Spectrometry
  • Materials
  • Materials Science
  • Military Research
  • Modules (Electronics)
  • Partial Pressure
  • Silicon Carbide
  • Transistors
  • Vapor Pressure

Fields of Study

  • Materials science

Readers

  • Electronics Engineering
  • Nuclear and Radiation Engineering.
  • Thin Film Deposition Science.

Technology Areas

  • Microelectronics