Experimental Investigation of Hot Electron and Related Effects in Gallium (Aluminum) Arsenide Devices

Abstract

The advance of crystal growth technology, specifically metalorganic chemical vapor deposition (MOCVD) as it relates to this work, has made it practical to manufacture an entirely new class of heterojunction devices. Physical properties of semiconductor heterojunction devices such as resonant tunneling and ballistic transport and various hot electron effects discussed within, have been moved from the status of academic curiosity to physically realizable, useful effects. The theoretical and experimental results from the heterostructure hot electron diode (HHED) a two-terminal device which exhibits S-shaped negative differential resistance, are presented, which shed new light on the transport processes involved in the tunneling, resonant tunneling and thermionic emission processes in a semiconductor heterostructures. Crystal growth technology, Metalorganic chemical vapor deposition (MOCVD), Heterojunction devices, Physical properties of semiconductor heterojunction.

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Document Details

Document Type
Technical Report
Publication Date
Jan 01, 1989
Accession Number
ADA205442

Entities

People

  • Ted K. Higman

Organizations

  • University of Illinois Urbana–Champaign

Tags

Communities of Interest

  • Advanced Electronics

DTIC Thesaurus Topics

  • Chemical Vapor Deposition
  • Compound Semiconductors
  • Electronics Laboratories
  • Electrons
  • Field Effect Transistors
  • Heterojunctions
  • High Electron Mobility Transistors
  • Materials
  • Physical Properties
  • Power Electronics
  • Quantum Wells
  • Semiconductors
  • Solid State Physics
  • Thermionic Emission
  • Three Dimensional
  • Transistors
  • Two Dimensional

Fields of Study

  • Materials science

Readers

  • Semiconductor Device Technology
  • Theoretical Analysis.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene