Spectroscopic Ellipsometry Characterisation of CVD Deposition and Doping Of Polysilicon Multilayer Structures

Abstract

Polysilicon multilayer structures were prepared by a CVD process. Spectroscopic ellipsometry supported by a computer modelling facility was used to synthesise models of the polysilicon-on-oxidised-silicon multilayer structures. Deposition temperature, recrystallisation and doping were studied on both bulk and SOS silicon wafers. The accuracy of interferometry as a film thickness measurement technique on polysilicon was also assessed. Great Britain.

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Document Details

Document Type
Technical Report
Publication Date
Oct 01, 1988
Accession Number
ADA205880

Entities

People

  • A. Morpeth
  • C. Pickering
  • G. R. Terry
  • Sanchit Sharma

Organizations

  • Royal Signals and Radar Establishment

Tags

DTIC Thesaurus Topics

  • Accuracy
  • Annealing
  • Coefficients
  • Computer Programs
  • Computers
  • Confidence Limits
  • Crystals
  • Diffusion
  • Films
  • Grain Boundaries
  • Grain Growth
  • Grain Size
  • Heat Treatment
  • Materials
  • Measurement
  • Refractive Index
  • Three Dimensional

Fields of Study

  • Materials science

Readers

  • Software Engineering.
  • Thin Film Deposition Science.